GC-BD804Semiconductor Chamfering Machine

Wafer size

4、6、8in

Wafer thickness

300 μm~1,500 μm

Workstation

Dual workstation

Wafer reference surface shape

OF/Notch (Notch optional)

Equipment size

2,250 (W)*1,650 (D)*2,600 (H)

Grinding X/Y/Z axis accuracy

X/Y/Z axis accuracy: ±1 μm

Ceramic suction cup plane accuracy: ≤3 μm

Accuracy of the grinding bench spindle end face and radial direction: ±1 μm

Accuracy of the grinding wheel spindle end face and radial direction: ±1 μm 

Outer diameter of the grinding wheel

Φ202 mm

Inner diameter of the grinding wheel mounting

Φ30 mm

Grinding wheel thickness

20 mm

Rotation speed of the grinding wheel

0-4,000 r/min (according to customer's demands)

Rotation speed of the Notch grinding wheel

0-100,000 r/min (according to customer's demands)

Grinding wheel mode

T, R, TT, RR, TR type, etc.

Wafer thickness measurement

(Non-contact or contact type)

Accuracy of the repeated thickness measurement: ±2 μm;

Measurement number: 8 point in the circumference +1 point in the center

Cleaning method

Rotation cleaning

Drying method

Centrifugal drying

Loading/unloading section

Number of boxes: 4

Number of slots: 25 (adjustable)