Powered by its platform-based technology engine, Gaoce enables cross-disciplinary technology transfer by applying its precision cutting and precision grinding platform technologies to Silicon carbide (SiC) material processing, offering an integrated “cutting–chamfering–grinding” solution. The company has established long-term, stable partnerships with leading domestic SiC substrate manufacturers. Meanwhile, value-added services such as technical support, integrated control, on-site commissioning, and personnel training are provided to ensure customers’ mass production requirements are met.
We independently developed 4-12″ full-series SiC diamond wire slicing machines, compatible with 14″ SiC seed crystal cutting. These slicing solutions offer high efficiency, superior quality, and stable cutting performance. Independently developed 4-12″ full-series SiC chamfering machines feature high machining precision, high processing efficiency, operational stability, and maintenance-free operation.
We independently developed diamond wire specifically for SiC wafer slicing with optimized coordination between equipment and consumables, providing excellent toughness, high efficiency, and low material loss. Our self-developed SiC chamfering grinding wheels are designed with customizable groove shapes and quantities, offering excellent form retention, long service life, and defect-free workpiece processing.
Gaoce has established a comprehensive R&D and quality control system covering the entire process of cutting, grinding, and polishing. Through a closed-loop integration of “equipment, consumables and process”, the company continuously improves SiC processing yield and production efficiency, helping customers reduce costs and enhance productivity.
